Document Details

Document Type : Article In Journal 
Document Title :
Controlling the Performance of P-type Cu2O/SnO Bilayer Thin- Film Transistors by Adjusting the Thickness of the Copper Oxide Layer
Controlling the Performance of P-type Cu2O/SnO Bilayer Thin- Film Transistors by Adjusting the Thickness of the Copper Oxide Layer
 
Subject : physics 
Document Language : English 
Abstract : The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, O-pp, of 10% as the upper layer and 3% O-pp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors 
ISSN : 0361-5235 
Journal Name : JOURNAL OF ELECTRONIC MATERIALS 
Volume : 44 
Issue Number : 1 
Publishing Year : 1435 AH
2015 AD 
Article Type : Article 
Added Date : Tuesday, August 22, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
H.A Al-JawhariAl-Jawhari, H.A InvestigatorDoctoratehaljawhari@kau.edu.sa
J.A (Caraveo-Frescas(Caraveo-Frescas, J.A ResearcherDoctorate 
M.N HedhiliHedhili, M.N ResearcherDoctorate 

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