Document Details

Document Type : Article In Journal 
Document Title :
The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc-Si:H Thin Films Prepared by PECVD Technique
The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc-Si:H Thin Films Prepared by PECVD Technique
 
Subject : physics 
Document Language : English 
Abstract : The increase in power density of 0.3, 0.5, 0.6, and 0.7 W cm(-2) for hydrogenated amorphous and nanocrystalline silicon (a-Si:H and nc-Si:H) thin film samples prepared by plasma enhanced chemical vapor deposition technique causes an increase in crystalline volume fraction when the silane concentration is fixed. This increase in crystalline volume fraction is correlated to the absorption coefficient and refractive index which are determined from ellipsometric measurements. The crystallinity of samples is studied by both Raman and X-ray diffraction techniques. A mild change in the optical energy gap around an average value of 1.8 eV is noticed due to the observed change in the degree of crystallinity of the samples when power density increases. Moreover, the ambipolar diffusion length measured by the steady-state photocarrier grating technique is found to change with the increase in power density. The values of some obtained optical parameters are compared to a standard crystalline sample. 
ISSN : 0587-4246 
Journal Name : ACTA PHYSICA POLONICA A 
Volume : 122 
Issue Number : 3 
Publishing Year : 1433 AH
2012 AD 
Article Type : Article 
Added Date : Sunday, July 23, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
R. I BadranBadran, R. I InvestigatorDoctoraterbadran@hu.edu.jo
H (Al-Amodi(Al-Amodi, H ResearcherDoctorate 
S YaghmourYaghmour, S ResearcherDoctorate 
R BruggemannBruggemann, R ResearcherDoctorate 
X Han,Han,, X ResearcherDoctorate 
S Xiong,Xiong,, S ResearcherDoctorate 

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