Document Details

Document Type : Article In Journal 
Document Title :
The electrical characteristics of thin film transistors with graphene oxide and organic insulators
The electrical characteristics of thin film transistors with graphene oxide and organic insulators
 
Subject : physics 
Document Language : English 
Abstract : We have studied the electrical characteristics of nanographene oxide (n-GO) thin film transistor and n- GO organic thin film transistors with poly(methyl methacrylate) (PMMA) and poly-4-vinylphenol (PVP) as organic insulators. One of the alternate methods to prepare GO is achieved by oxidizing graphite via modified Hummers method. In this study, the GO was synthesized by a modified Hummers method. The graphene oxide thin films with PMMA and PVP were prepared by spin coating the precursor solution on a GO/SiO2 dielectrics bilayer. The graphene oxide thin film transistor was found to exhibit a high mobility of 0.375 cm(2)/V.s. This indicates that n-GO film has a more important effect to fabricate a high mobility n-GO thin film transistor than n-GO based thin film transistor with PMMA and PVP 
ISSN : 0379-6779 
Journal Name : SYNTHETIC METALS 
Volume : 199 
Issue Number : 10 
Publishing Year : 1435 AH
2015 AD 
Article Type : Article 
Added Date : Tuesday, August 22, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
I KarterKarter, I Researcher ibrahimkarteri@gmail.com
S KaratasKaratas, S ResearcherDoctorate 
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctorate 

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