Document Details Document Type : Article In Journal  Document Title : Effect of sulfur on dielectric properties of Cd-Se Glassy system Effect of sulfur on dielectric properties of Cd-Se Glassy system   Subject : physics  Document Language : English  Abstract : Cd4Se96-xSx with x = 0, 4, 8, 12 amorphous semiconductor has been prepared by melt-quenching technique. Bulk samples in the form of powder were characterized by XRD which shows the amorphous nature of the prepared samples. The dielectric parameters were studied in the temperature range of 300-350 K and in the frequency range of 20 Hz-1 MHz. Dielectric dispersion are observed in the Cd-Se-S system, these results are explained on the basis of dipolar type of dielectric dispersion. It is also observed that DC conductivity increases and activation energy decrease with increase of sulfur concentration, which is mainly due to increase in the density of localized state in the mobility gap or decrease in the band gap.  ISSN : 0957-4522  Journal Name : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS  Volume : 27  Issue Number : 3  Publishing Year : 1437 AH 2016 AD  Article Type : Article  Added Date : Sunday, August 13, 2017  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email M Ganaie Ganaie, M Investigator Doctorate   M Zulfequar Zulfequar, M Researcher Doctorate mzulfe@rediffmail.com Files File Name Type Description  42605.pdf pdf   Back To Researches Page