Document Details

Document Type : Article In Journal 
Document Title :
Development of field effect transistor based on single graphene ribbon prepared by a modified unzipping process of MWCNT
Development of field effect transistor based on single graphene ribbon prepared by a modified unzipping process of MWCNT
 
Subject : physics 
Document Language : English 
Abstract : Here we report the synthesis of graphene ribbon by unzipping the carbon nanotubes and investigate its performance as a field effect transistor. The produced graphene ribbons were characterized by transmission electron microscopy (TEM), Raman spectroscopy, X-ray photoelectron microscopy (XPS) and atomic force microscopy (AFM). A single layer graphene ribbon with average width of 600 +/- 20 nm was obtained. This ribbon was drop casted on a silicon substrate coated by 300 nm silicon oxide layer with patterned gold electrode by lithography system. The developed single graphene FET showed very high saturation current density of 2.8A/mm, electrons mobility of 4000 cm(2)/V.s and holes mobility of 3200 cm(2)/V.s. These values are higher than the values obtained from FET based graphene prepared by CVD and chemical exfoliation methods. The enhancement of the saturation current value and obtaining high mobility for FET based on single graphene ribbon will open a new avenue to develop a new generation of FET for future applications 
ISSN : 0379-6779 
Journal Name : SYNTHETIC METALS 
Volume : 217 
Issue Number : 1 
Publishing Year : 1437 AH
2016 AD 
Article Type : Article 
Added Date : Thursday, August 10, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
Waleed E MahmoudMahmoud, Waleed E InvestigatorDoctoratew_e_mahmoud@yahoo.com
F.S Al-HazmiAl-Hazmi, F.S ResearcherDoctorate 
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
F.S ShokrShokr, F.S ResearcherDoctorate 
G.W BeallBeall, G.W ResearcherDoctorate 

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