Document Details

Document Type : Article In Journal 
Document Title :
Fabrication and Characterizations of Aluminum-Doped Zinc Oxide (AZO): Cu2O/p-Si Photodiodes
Fabrication and Characterizations of Aluminum-Doped Zinc Oxide (AZO): Cu2O/p-Si Photodiodes
 
Subject : physics 
Document Language : English 
Abstract : In this paper, aluminum-doped zinc oxide (AZO):Cu2O/p-Si photodiode was fabricated based on simple solution process. The photodiodes were prepared using Zn1-xAlxO:Cu2O thin films grown on p-Si substrates. The photoresponse properties of the p-Si/AZO:Cu2O/Al photodiodes were investigated by current-voltage and capacitance-conductance-voltage characteristics under solar light. The photoconducting mechanism of the diodes were analyzed by the transient photocurrent measurements. It was found that the photoconductivity mechanism is controlled by the continuous distribution of trap levels. The diodes exhibited the photocapacitance and are changed with increasing Cu2O content. The presence of the interface states in the interface of the diodes was confirmed by the series resistancevoltage behavior. The obtained results indicate that the p-Si/Zn1-xAlxO-Cu2O/Al diodes can be used as a photosensor in optoelectronic applications 
ISSN : 1555-130X 
Journal Name : JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 
Volume : 11 
Issue Number : 6 
Publishing Year : 1437 AH
2016 AD 
Article Type : Article 
Added Date : Tuesday, August 8, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
Najla M KhusayfanKhusayfan, Najla M InvestigatorDoctoratenk148@hotmail.com

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