Document Details

Document Type : Article In Journal 
Document Title :
Electrical characterization of a Schottky diode based on organic semiconductor film
Electrical characterization of a Schottky diode based on organic semiconductor film
 
Subject : physics 
Document Language : English 
Abstract : The organic Schottky diode of fluorescein sodium salt using aluminium and gold metals were fabricated. Electronic and interface state properties of the Al/p-FSS Schottky diode were investigated by current-voltage and capacitance-voltage analyses. The electronic parameters such as barrier height (phi(b)=0.72 eV), ideality factor (n=3.05) and series resistance (7.73 k square) of the Schottky diode were determined by performing different plots. The phi(b)(C-V) value obtained capacitance-voltage measurements is 1.05 eV. The barrier height obtained from the C-V measurements is higher than that of obtained from the I-V measurements. The difference between phi(b)(I-V) and phi(b)(C-V) barrier height values can be due to interfacial layer, excess capacitance and barrier inhomogenity. The ideality factor confirms that the Al/p-FSS device is a metal insulator-semiconductor Schottky diode. The shape of the density distribution of the interface states is in the range of E-ss-0.02 eV to E-ss-1.21 eV. 
ISSN : 1454-4164 
Journal Name : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 
Volume : 16 
Issue Number : 7-8 
Publishing Year : 1435 AH
2014 AD 
Article Type : Article 
Added Date : Monday, July 31, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
R. H Al OrainyAl Orainy, R. H InvestigatorDoctorater-aloraini@hotmail.com

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