Document Details Document Type : Article In Journal  Document Title : Switching Properties of TI2GaInSe4 Single Crystal Switching Properties of TI2GaInSe4 Single Crystal   Subject : physics  Document Language : English  Abstract : Investigation of the switching phenomenon on TI2GaInSe4 single crystal, revealed that it is typical for a memory switch. The switching process takes place with both polarities on the crystal and have symmetrical shapes. Current-voltage characteristics (CVC) of symmetrical AgfTlGaInSe(4)/Ag structures exhibit two distinct regions, high resistance "off" state and low resistance "on" state having negative differential resistance (NDR). TI2GaInSe4 is a quaternary semiconductor exhibiting S-type I-V characteristics. The experimental results indicate that the phenomenon in our sample is very sensitive to temperature, light intensity and sample thickness. The switching parameters were checked under the influence of different factors of the ambient conditions. The present study is the first for this phenomenon in TI2GaInSe4 compound  ISSN : 1555-130X  Journal Name : JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS  Volume : 92  Issue Number : 5  Publishing Year : 1435 AH 2014 AD  Article Type : Article  Added Date : Sunday, July 30, 2017  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email R. H Al Orainy Al Orainy, R. H Investigator Doctorate   Files File Name Type Description  42327.pdf pdf   Back To Researches Page