Document Details Document Type : Article In Journal  Document Title : Interpretation of Switching Properties of InGaSe2 Single Crystal Interpretation of Switching Properties of InGaSe2 Single Crystal   Subject : physics  Document Language : English  Abstract : The goal of this paper is to present experimental results of the switching effect and analyze qualitatively the influence of various factors, such as temperature, light illumination and sample thickness on switching behavior of the high quality ternary chalcogenide semiconductor InGaSe2. Current-controlled negative resistance of InGaSe2 single crystals has been observed for the first time. It has been found that indium gallium diselenide single crystals exhibit bistable or memory switching. The switching process takes place with both polarities on the crystal and has symmetric shapes. Current voltage characteristics of Ag-InGaSe2-Ag structures exhibit two distinct regions, high resistance OFF state and low-resistance ON state having negative differential resistance. InGaSe2 is a ternary semiconductor exhibiting S-type I-V characteristics. The specimen under test showed threshold switching with critical field of the switching being 10(3) V/cm at room temperature  ISSN : 0587-4246  Journal Name : ACTA PHYSICA POLONICA A  Volume : 121  Issue Number : 3  Publishing Year : 1433 AH 2012 AD  Article Type : Article  Added Date : Tuesday, July 25, 2017  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email R. H Al Orainy Al Orainy, R. H Investigator Doctorate raloraini@yahoo.com Files File Name Type Description  42254.pdf pdf   Back To Researches Page