Document Details

Document Type : Article In Journal 
Document Title :
Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure
Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure
 
Subject : PHYSICS 
Document Language : English 
Abstract : The electrical and photovoltaic properties of metal/nanostructure CuPc phtalocynine organic layer /semiconductor diode have been investigated. The diode indicated a good rectifying behavior with non-linear behavior due to the organic and inorganic interfacial layers. The barrier height (0.77 eV) and ideality factor (1.99) of the studied diode is higher than that of conventional Al/p-Si Schottky diode. This indicates that barrier height could be increased by using CuPc phtalocynine organic layer on p-type silicon by changing the space charge region of p-type silicon. The photovoltaic parameters of the diode were found to be Voc=0.25 and J(sc)=607.2 mu A under AM1.5. The obtained results indicate that the barrier height of conventional Al/p-Si Schottky diode can be increased by organic modification and metal/nanostructure CuPc/semiconductor diode can be used for optoelectronic device applications as a photosensor. 
ISSN : 1454-4164 
Journal Name : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 
Volume : 14 
Issue Number : 9-10 
Publishing Year : 1433 AH
2012 AD 
Article Type : Article 
Added Date : Sunday, July 23, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
M CavasCavas, M InvestigatorDoctorate 
M. Enver AydinAydin, M. Enver ResearcherDoctorate 
A.A Al-Ghamdi,Al-Ghamdi,, A.A ResearcherDoctorate 
Omar A (Al-Hartomy(Al-Hartomy, Omar A ResearcherMaster 
Farid El-TantawyEl-Tantawy, Farid ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctoratefyhanoglu@firat.edu.tr

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