Document Details Document Type : Article In Journal  Document Title : Temperature-dependent threshold current in inp quantum-dot lasers Temperature-dependent threshold current in inp quantum-dot lasers   Subject : Physics  Document Language : English  Abstract : We explore the origins of the threshold current temperature dependence in InP quantum-dot (QD) lasers. While the internal optical mode loss does not change with temperature, the peak gain required to overcome the losses becomes more difficult to achieve at elevated temperature due to the thermal spreading of carriers among the available states. In 2-mm-long lasers with uncoated facets, this effect is responsible for 66 of the difference in threshold current density between 300 and 360 K. Spontaneous recombination current only makes up at most 10 of the total recombination current density over this temperature range, but the temperature dependence of the spontaneous recombination in the QD and quantum-well capping layers can be used, assuming only a simple proportional nonradiative recombination process, to explain the temperature dependence of the threshold current density.  ISSN : 1077-260X  Journal Name : IEEE Journal on Selected Topics in Quantum Electronics  Volume : 17  Issue Number : 5  Publishing Year : 1432 AH 2011 AD  Article Type : Article  Added Date : Sunday, June 10, 2012  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email P M Smowton Smowton, P M Researcher Doctorate smowtonpm@cf.ac.uk S N Elliott Elliott, S N Researcher Doctorate elliottS1@cf.ac.uk S Shutts Shutts, S Researcher Doctorate   محمد سعد الغامدي Al-Ghamdi, Mohammed Saad Researcher Doctorate msalghamdi@kau.edu.sa A B Krysa Krysa, A B Researcher Doctorate a.krysa@sheffield.ac.uk Files File Name Type Description  33564.pdf pdf Abstract Back To Researches Page