Document Details Document Type : Article In Journal  Document Title : Growth and characterisation of ZnSe semiconductor nanowires Growth and characterisation of ZnSe semiconductor nanowires   Subject : Physics  Document Language : English  Abstract : The growth and characteristics of wide gap II-VI semiconductor nanowires prepared by the so-called Vapour-Liquid-Solid (VLS) technique was presented ZnSe nanowires were prepared on Si (111) by using Au as catalyst. Vapor-Liquid-Solid (VLS) process under certain conditions to form the desired nanowires. The as-synthesized products were characterized by SEM and EDX. The SEM analysis of ZnSe nanowires indicated that nanowires grow randomly at angles widely different from the vertical.  ISSN : 1812-5654  Journal Name : Journal of Applied Sciences  Volume : 11  Issue Number : 7  Publishing Year : 1432 AH 2011 AD  Article Type : Article  Added Date : Sunday, June 10, 2012  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email فاتن إبراهيم الحازمي Al-Hazmi, Faten E Researcher Doctorate fialhazmi@kau.edu.sa Files File Name Type Description  33563.pdf pdf Abstract Back To Researches Page