Document Details

Document Type : Article In Journal 
Document Title :
Resolution degradation of semiconductor detectors
Resolution degradation of semiconductor detectors
 
Subject : Resolution degradation of semiconductor detectors 
Document Language : English 
Abstract : Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector usingan analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6–660 keV. r 2005 Elsevier B.V. All rights reserved. 
ISSN : 0168-9002 
Journal Name : Nuclear Instruments and Methods in Physics Research 
Volume : 546 
Issue Number : 2 
Publishing Year : 1426 AH
2005 AD
 
Number Of Pages : 4 
Article Type : Article 
Added Date : Monday, June 15, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
Alexander G.Alexander G.InvestigatorDoctorate 
J. Keith J. KeithResearcherDoctorate 
OwensOwensResearcherDoctorate 
den Hartogden HartogResearcherDoctorate 
PeacockPeacockResearcherDoctorate 
Al-JawhariAl-JawhariResearcherDoctorate 

Back To Researches Page