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Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Effect of sulfur on dielectric properties of Cd-Se Glassy system
Effect of sulfur on dielectric properties of Cd-Se Glassy system
Subject
:
physics
Document Language
:
English
Abstract
:
Cd4Se96-xSx with x = 0, 4, 8, 12 amorphous semiconductor has been prepared by melt-quenching technique. Bulk samples in the form of powder were characterized by XRD which shows the amorphous nature of the prepared samples. The dielectric parameters were studied in the temperature range of 300-350 K and in the frequency range of 20 Hz-1 MHz. Dielectric dispersion are observed in the Cd-Se-S system, these results are explained on the basis of dipolar type of dielectric dispersion. It is also observed that DC conductivity increases and activation energy decrease with increase of sulfur concentration, which is mainly due to increase in the density of localized state in the mobility gap or decrease in the band gap.
ISSN
:
0957-4522
Journal Name
:
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume
:
27
Issue Number
:
3
Publishing Year
:
1437 AH
2016 AD
Article Type
:
Article
Added Date
:
Sunday, August 13, 2017
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
M Ganaie
Ganaie, M
Investigator
Doctorate
M Zulfequar
Zulfequar, M
Researcher
Doctorate
mzulfe@rediffmail.com
Files
File Name
Type
Description
42605.pdf
pdf
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