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Document Details
Document Type
:
Article In Journal
Document Title
:
Electrical and Photoresponse Properties of CuFe1-xSnxO2/p- Si Photodiode
Electrical and Photoresponse Properties of CuFe1-xSnxO2/p- Si Photodiode
Subject
:
physics
Document Language
:
English
Abstract
:
The electrical and photoresponse properties of Al/CuFe1-xSnxO2 (x = 0.03)/p-Si/Al diode were investigated using current voltage (I-V) and capacitance/conductance voltage measurements. The diodes exhibited a rectifying value with obtained electronic parameters. The barrier height value of the diode is increased with increasing temperature, while the ideality factor is decreased. The change in electronic parameters of the diode is explained on the basis of Schottky barrier height inhomogeneities at the interface. The value of C decreases with increasing frequency. The decrease was explained on the basis of interface states. The photoresponse properties of the diode was investigated under solar light and the diode exhibited a photodiode behavior at room temperature.
ISSN
:
1555-1318
Journal Name
:
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
Volume
:
11
Issue Number
:
3
Publishing Year
:
1437 AH
2016 AD
Article Type
:
Article
Added Date
:
Thursday, August 10, 2017
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
F.E Al-Hazmi
Al-Hazmi, F.E
Investigator
Doctorate
ialhazmi@kau.edu.sa
Files
File Name
Type
Description
42574.pdf
pdf
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