Document Details

Document Type : Article In Journal 
Document Title :
Spectroscopic ellipsometry and electrical characterizations of InGaAs:Mg thin films lattice matched to InP
Spectroscopic ellipsometry and electrical characterizations of InGaAs:Mg thin films lattice matched to InP
 
Subject : physics 
Document Language : English 
Abstract : Mg-doped InGaAs films were grown at 560 degrees C lattice matched to InP semi-insulating substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp2Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD) and spectroscopic ellipsometry (SE) are the tools used in this work. The crystalline quality and the n-p conversion of the InGaAs:Mg films are described and discussed in relation to the Cp2Mg flow. Distinguishing triple emissions peaks in PL spectra are observed and seem to be strongly dependent on the Cp2Mg flow. SE was used to investigate the interband transitions in InGaAs:Mg/InP heterointerfaces and the different critical point energies were identified 
ISSN : 2190-5444 
Journal Name : EUROPEAN PHYSICAL JOURNAL PLUS 
Volume : 131 
Issue Number : 6 
Publishing Year : 1437 AH
2016 AD 
Article Type : Article 
Added Date : Thursday, August 10, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
I ZeydiZeydi, I InvestigatorDoctorate 
M EzzediniEzzedini, M ResearcherDoctorate 
A SayariSayari, A ResearcherDoctorateamor.sayari@laposte.net
E. ShalaanShalaan, E. ResearcherDoctorate 
S WagehWageh, S ResearcherDoctorate 
L SfaxiSfaxi, L ResearcherDoctorate 
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
R (M'Gaieth(M'Gaieth, R Researcher  

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